fds6982 fds6982, re v . d1 fds6982 dual n-channel, notebook power supply mosfet june 1999 features ? q2: 8.6a, 30v. r ds(on) = 0.015 ? @ v gs = 10v r ds(on) = 0.020 ? @ v gs = 4.5v ? q1: 6.3a, 30v. r ds(on) = 0.028 ? @ v gs = 10v r ds(on) = 0.035 ? @ v gs = 4.5v ? fast switching speed. ? high performance trench technology for extremely low r ds(on) . ? 1999 fairchild semiconductor corporation absolute maximum ratings t a = 25c unless otherwise noted symbol parameter q2 q1 units v dss drain-source voltage 30 30 v v gss gate-source voltage 20 20 v i d drain current - continuous (note 1a) 8.6 6.3 a - pulsed 30 20 p d power dissipation for dual operation 2 w power dissi p ation for sin g le o p eration ( note 1a ) 1.6 (note 1b) 1 (note 1c) 0.9 t j , t stg operating and storage junction temperature range -55 to +150 c thermal characteristics r ja thermal resistance, junction-to-ambient (note 1a) 78 c/w r jc thermal resistance, junction-to-case (note 1) 40 c/w package marking and ordering information device marking device reel size tape width quantity f d s 69 82 f d s 69 82 13? 12 m m 2500 un i ts general description this part is designed to replace two single so-8 mosfets in synchronous dc:dc power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. fds6982 con t ains two unique 30 v , n-channel, logic level, power t renc h a mosfe t s designed to maximize power conversion efficiency. the high-side switch (q1) is designed with specific emphasis on reducing switching losses while the low-side switch (q2) is optimized for low conduction losses (less than 20m ? at v gs = 4.5v). applications ? battery powered synchronous dc:dc converters. ? embedded dc:dc conversion. so-8 d2 d1 d1 d2 s2 s1 g2 g1 pin 1 1 5 7 8 2 3 4 6 q1 q2
fds6982 fds6982, re v . d1 electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions type min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a q2 q1 30 30 v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c q2 q1 27 26 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v all 1 a i gssf gate-body leakage, forward v gs = 20 v, v ds = 0 v all 100 na i gssr gate-body leakage, reverse v gs = -20 v, v ds = 0 v all -100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 a q2 q1 1 1 2.2 1.6 3 3 v ? v gs(th) ? t j gate threshold voltage temperature coefficient i d = 250 a, referenced to 25 c q2 q1 -5 -4 mv/ c v gs = 10 v, i d = 8.6 a v gs = 10 v, i d = 8.6 a, t j = 125 c v gs = 4.5 v, i d = 7.5 a q2 0.012 0.018 0.016 0.015 0.024 0.020 ? r ds(on) static drain-source on-resistance v gs = 10 v, i d = 6.3 a v gs = 10 v, i d = 6.3 a, t j = 125 c v gs = 4.5 v, i d = 5.6 a q1 0.021 0.038 0.028 0.028 0.047 0.035 ? i d(on) on-state drain current v gs = 10 v, v ds = 5 v q2 q1 30 20 a g fs forward transconductance v ds = 5 v, i d = 8.6 a v ds = 5 v, i d = 6.3 a q2 q1 50 40 s dynamic characteristics c iss input capacitance q2 q1 2085 760 pf c oss output capacitance q2 q1 420 160 pf c rss reverse transfer capacitance v ds = 10 v, v gs = 0 v, f = 1.0 mhz q2 q1 160 70 pf
fds6982 fds6982, re v . d1 electrical characteristics (continued) t a = 25c unless otherwise noted s y mbol parameter test conditions type min t yp max units switching characteristics (note 2) t d(on) turn-on delay time q2 q1 15 10 27 18 ns t r turn-on rise time q2 q1 11 14 20 25 ns t d(off) turn-off delay time q2 q1 36 21 58 34 ns t f turn-off fall time v dd = 15 v, i d = 1 a, v gs = 10v, r gen = 6 ? q2 q1 18 7 29 14 ns q g total gate charge q2 q1 18.5 8.5 26 12 nc q gs gate-source charge q2 q1 7.3 2.4 nc q gd gate-drain charge q2 v ds = 15 v, i d = 8.6 a, v gs = 5 v q1 v ds = 15 v, i d = 6.3 a,v gs = 5 v q2 q1 6.2 3.1 nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current q2 q1 1.3 1.3 a v sd drain-source diode forward voltage v gs = 0 v, i s = 1.3 a (note 2) v gs = 0 v, i s = 1.3 a (note 2) q2 q1 0.72 0.74 1.2 1.2 v notes: 1. r ja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r jc is guaranteed by design while r ca is determined by the user's board design.thermal rating based on independant single device opperation. scale 1 : 1 on letter size paper 2. pulse test: pulse width 300 s, duty cycle 2.0% a) 78 c/w when mounted on a 0.5 in 2 pad of 2 oz. copper. b) 125 c/w when mounted on a 0.02 in 2 pad of 2 oz. copper. c) 135 c/w when mounted on a minimum pad.
fds6982 fds6982, re v . d1 typical characteristics: q2 figure 1. on-region characteristics. figure 2. on-resistance variation with drain current and gate voltage. figure 3. on-resistance variation with temperature. figure 4. on-resistance variation with gate-to-source voltage. figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. 0 10 20 30 40 50 01234 v ds , drain-source voltage (v) v gs = 10v 3.5v 3.0v 4.5v 4.0v 5.0v 0.8 1 1.2 1.4 1.6 1.8 2 0 1020304050 i d , drain current (a) v gs = 4.0v 6.0v 5.0v 4.5v 7.0v 10v 0 10 20 30 40 50 123456 v gs , gate to source voltage (v) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 00.40.81.21.6 v sd , body diode forward voltage (v) t a = 125 o c 25 o c -55 o c v gs = 0v 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 2 5 5 0 7 5 100 125 150 t j , junction temperature ( o c) i d = 8.6a v gs = 10v 0 0.01 0.02 0.03 0.04 246810 v gs , gate to source voltage (v) i d = 4.5a t a = 125 o c t a = 25 o c
fds6982 fds6982, re v . d1 typical characteristics: q2 (continued) figure 7. gate-charge characteristics. figure 8. capacitance characteristics. figure 9. maximum safe operating area. figure 10. single pulse maximum power dissipation. 0 2 4 6 8 10 0 5 10 15 20 25 30 35 q g , gate charge (nc) i d = 8.6a v ds = 5v 10v 15v 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 25 30 v ds , drain to source voltage (v) c iss c rss c oss f = 1mhz v gs = 0 v 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) dc 10s 1s 100ms 10ms 1ms 100 ja = 135 o c/w t a = 25 o c 0 5 10 15 20 25 30 0.01 0.1 1 10 100 1 000 single pulse time (sec) single pulse r ja = 135 o c/w ta = 25 o c
fds6982 fds6982, re v . d1 typical characteristics: q1 figure 11. on-region characteristics. figure 12. on-resistance variation with drain current and gate voltage. figure 13. on-resistance variation with temperature. figure 14. on-resistance variation with gate-to-source voltage. figure 15. transfer characteristics. figure 16. body diode forward voltage variation with source current and temperature. 0 10 20 30 40 01234 v ds , drain-source voltage (v) v gs = 10v 3.5v 3.0v 4.5v 4.0v 6.0v 2.5v 0.8 1 1.2 1.4 1.6 1.8 2 0 10203040 i d , drain current (a) v gs = 3.5v 6.0v 5.0v 4.5v 4.0v 10v 0 10 20 30 40 123456 v gs , gate to source voltage (v) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.4 0.8 1.2 1.6 v sd , body diode forward voltage (v) t a = 125 o c 25 o c -55 o c v gs = 0v 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 2 5 5 0 7 5 100 125 150 t j , junction temperature ( o c) i d = 6.3a v gs = 10v 0 0.02 0.04 0.06 0.08 246810 v gs , gate to source voltage (v) i d = 3.5a t a = 125 o c t a = 25 o c
fds6982 fds6982, re v . d1 typical characteristics: q1 (continued) figure 17. gate-charge characteristics. figure 18. capacitance characteristics. figure 19. maximum safe operating area. figure 20. single pulse maximum power dissipation. 0 2 4 6 8 10 0481216 q g , gate charge (nc) i d = 6.3a v ds = 5v 10v 15v 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 v ds , drain to source voltage (v) c iss c rss c oss f = 1mhz v gs = 0 v 0 5 10 15 20 25 30 0.01 0.1 1 10 100 1 000 single pulse time (sec) single pulse r ja = 135 o c/w ta = 25 o c 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage (v) dc 10s 1s 100ms 10ms 1ms 100 ja = 135 o c/w t a = 25 o c
fds6982 fds6982, re v . d1 typical characteristics: q1 & q2 (continued) figure 21. transient thermal response curve. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , time (sec) transient thermal resistance r(t), normalized effective 1 single pulse d = 0.5 0.1 0.05 0.02 0.01 0.2 duty cycle, d = t /t 1 2 r (t) = r(t) * r r = 135c/w ja ja ja t - t = p * r (t) ja a j p(pk) t 1 t 2
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